Pubblicazioni

Pubblicazioni su rivista

  1. V. Vadalà, A. Raffo, S. Di Falco, G. Bosi, A. Nalli, G. Vannini, “A load-pull characterization technique accounting for harmonic tuning,” IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 7, pp. 2695–2704, Jul. 2013.
  2. A. Raffo, G. Bosi, V. Vadalà, G. Vannini, “Behavioral modeling of GaN FETs: a load-line approach,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 1, pp. 73–82, Jan. 2014.
  3. G. Bosi, G. Crupi, V. Vadalà, A. Raffo, A. Giovannelli, G. Vannini. “Nonlinear modeling of LDMOS transistors for high-power FM transmitters,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 27, no. 5–6, pp. 780–791, Sept.-Dec. 2014.
  4. G. Crupi, A. Raffo, G. Avolio, G. Bosi, G. Sivverini, F. Palomba, A. Caddemi, D. M. M.-P. Schreurs, G. Vannini, “Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design,” Solid-State Electronics, vol. 104, pp. 25–32, Feb. 2015.
  5. A. Raffo, V. Vadalà, G. Bosi, F. Trevisan, G. Avolio, G. Vannini, “Waveform engineering: State-of-the-art and future trends,” International Journal of RF and Microwave Computer-Aided Engineering, vol. 27, no. 1, pp. 1–16, Jan. 2017.
  6. G. Bosi, A. Raffo, F. Trevisan, V. Vadalà, G. Crupi, G. Vannini, “Nonlinear-embedding design methodology oriented to LDMOS power amplifiers,” IEEE Transactions on Power Electronics, vol. 33, no. 10, pp. 8764–8774, Oct. 2018.
  7. A. Raffo, G. Avolio, V. Vadalà, G. Bosi, G. Vannini, D. Schreurs, “Assessing GaN FET performance degradation in power amplifiers for pulsed radar systems,” IEEE Microwave and Wireless Components Letters, vol. 28, no. 11, pp. 1035–1037, Nov. 2018.
  8. A. Petrocchi, A. Raffo, G. Bosi, G. Avolio, D. Resca, G. Vannini, D. Schreurs, “An ultra-wideband sensing board for radio frequency front-end in IoT transmitters,” Electronics, vol. 8, no. 10, p. 1191, Oct. 2019.
  9. A. Raffo, V. Vadalà, H. Yamamoto, K. Kikuchi, G. Bosi, N. Ui, K. Inoue, G. Vannini, “A new modeling technique for microwave multicell transistors based on EM simulations,” IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 7, pp. 3100-3110, July 2020.

Pubblicazioni a conferenza

  1. V. Vadalà, A. Raffo, G. Bosi, G. Crupi, G. Vannini, “Transistor vector load-pull characterization for millimeter-wave power amplifier design,” 79th Microwave Measurement Conference (ARFTG), Montreal, Canada, Jun. 2012, pp. 1–3.
  2. G. Crupi, A. Raffo, G. Sivverini, G. Bosi, G. Avolio, D. Schreurs, A. Caddemi, G. Vannini, “Non-linear look-up table modeling of GaAs HEMTs for mixer application,” Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Dublin, Ireland, Sept. 2012, pp. 1–3.
  3. V. Vadalà, G. Bosi, A. Raffo, G. Vannini, G. Avolio, D. Schreurs, “Influence of the gate current dynamic behaviour on GaAs HEMT reliability issues,” 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, The Netherlands, Oct. 2012, pp. 258–261.
  4. G. Bosi, A. Raffo, G. Avolio, V. Vadalà, D. Schreurs, G. Vannini, “Microwave FET model identification based on vector intermodulation measurements,” 2013 IEEE MTT-S International Microwave Symposium Digest, Seattle, WA, USA, Jun. 2013, pp. 1–4.
  5. A. Nalli, A. Raffo, G. Avolio, V. Vadalà, G. Bosi, D. Schreurs, G. Vannini, “Extremely low-frequency measurements using an active bias tee,” 2013 IEEE MTT-S International Microwave Symposium Digest, Seattle, WA, USA, Jun. 2013, pp. 1–4.
  6. A. Raffo, V. Vadalà, G. Avolio, G. Bosi, A. Nalli, D. Schreurs, G. Vannini, “Linear versus nonlinear de-embedding: experimental investigation,” 81st ARFTG Microwave Measurement Conference (ARFTG), Seattle, WA, USA, Jun. 2013, pp. 1–5.
  7. G. Bosi, A. Raffo, V. Vadalà, A. Nalli, G. Vannini, “Identification of the optimum operation for GaN HEMTs in high-power amplifiers,” SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Rio de Janeiro, Brasil, Aug. 2013, pp. 1–5.
  8. G. Bosi, A. Raffo, A. Nalli, V. Vadalà, G. Vannini, “Characterization of charge-trapping effects in GaN FETs through low-frequency measurements,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Leuven, Belgium, Apr. 2014, pp. 1–3.
  9. V. Vadalà, A. Raffo, P. Colantonio, E. Cipriani, F. Giannini, C. Lanzieri, A. Pantellini, A. Nalli, G. Bosi, G. Vannini, “Evaluation of FET performance and restrictions by low-frequency measurements,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Leuven, Belgium, Apr. 2014, pp. 1–3.
  10. Z. Marinković, G. Crupi, A. Raffo, G. Bosi, G. Avolio, V. Marković, A. Caddemi, G. Vannini, D. M. M.-P. Schreurs, “A neural network approach for nonlinear modelling of LDMOSFETs,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Leuven, Belgium, Apr. 2014, pp. 1–3.
  11. G. Bosi, A. Raffo, G. Vannini, E. Cipriani, P. Colantonio, F. Giannini, “Gate waveform effects on high-efficiency PA design: an experimental validation,” 9th European Microwave Integrated Circuit Conference (EuMIC), Rome, Italy, Oct. 2014, pp. 329–332.
  12. G. Bosi, A. Raffo, V. Vadalà, G. Vannini, “A new description of fast charge-trapping effects in GaN FETs,” 2015 IEEE MTT-S International Microwave Symposium Digest, Phoenix, AZ, USA, May 2015, pp. 1–4.
  13. E. Cipriani, P. Colantonio, F. Giannini, G. Bosi, A. Raffo, V. Vadalà, G. Vannini, “C-band power amplifier design based on low-frequency waveform engineering,” 10th European Microwave Integrated Circuits Conference (EuMIC), Paris, Sept. 2015, pp. 325–328.
  14. A. Raffo, P. Colantonio, E. Cipriani, V. Vadalà, G. Bosi, T. M. Martin-Guerrero, G. Vannini, F. Giannini “Theoretical consideration on harmonic manipulated amplifiers based on experimental data,” Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Taormina, Italy, Oct. 2015, pp. 1–3.
  15. A. Raffo, G. Bosi, V. Vadalà, G. Vannini, “Nonlinear modelling of GaN transistors: Behavioural and analytical approaches,” 12th International Conference on Telecommunication in Modern Satellite, Cable and Broadcasting Services (TELSIKS), Niš (Serbia), Oct. 2015, pp. 83–89.
  16. G. Bosi, A. Raffo, G. Avolio, D. Schreurs, D. A. Humphreys, “Impact of microwave measurement uncertainty on the nonlinear embedding procedure,” 87th Microwave Measurement Conference (ARFTG), San Francisco, CA, USA, May 2016, pp. 1–4.
  17. D. A. Humphreys, A. Raffo, G. Bosi, G. Vannini, D. Schreurs, K. N. Gebremicael, “Maximizing the benefit of existing equipment for nonlinear and communication measurements,” 87th Microwave Measurement Conference (ARFTG), San Francisco, CA, USA, May 2016, pp. 1–4.
  18. G. Formicone, J. Burger, J. Custer, G. Bosi, A. Raffo, G. Vannini, “Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology,” 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, Oct. 2016, pp. 33–36.
  19. V. Vadalà, A. Raffo, G. Bosi, G. Vannini, P. Colantonio, F. Giannini, “Fast extraction of accurate I/V models for harmonically-tuned power amplifier design,” 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, Oct. 2016, pp. 285–288.
  20. G. Bosi, A. Raffo, V. Vadalà, F. Trevisan, G. Vannini, O. Cengiz, O. Sen, E. Ozbay, “Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance,” 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, Oct. 2016, pp. 41–44.
  21. G. Formicone, J. Burger, J. Custer, W. Veitschegger, G. Bosi, A. Raffo, G. Vannini, “A GaN power amplifier for 100 VDC Bus in GPS L-band,” Power Amplifiers for Wireless and Radio Applications (PAWR), Phoenix, AZ, USA, Jan. 2017, pp. 100–103.
  22. F. Trevisan, A. Raffo, G. Bosi, V. Vadalà, G. Vannini, G. Formicone, J. Burger, J. Custer, “75-VDC GaN technology investigation from a degradation perspective,” 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Graz, Austria, Apr. 2017, pp. 1–4.
  23. G. Bosi, A. Raffo, G. Avolio, D. Schreurs, G. Vannini, “Impact of transistor model uncertainty on microwave load-pull simulations,” 2017 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), Turin, Italy, May 2017, pp. 1–6.
  24. G. Bosi, A. Raffo, V. Vadalà, F. Trevisan, G. Formicone, J. Burger, J. Custer, G. Vannini, “Evaluation of high-voltage transistor reliability under nonlinear dynamic operation,” 12th European Microwave Integrated Circuits Conference (EuMIC), Nuremberg, Germany, Oct. 2017, pp. 248–251.
  25. E. Cipriani, P. Colantonio, F. Giannini. A. Raffo, V. Vadalà, G. Bosi, G. Vannini, “Extended operation of class-F power amplifiers using input waveform engineering,” 12th   European Microwave Integrated Circuits Conference (EuMIC), Nuremberg, Germany, Oct. 2017, pp. 144–147.
  26. A. Petrocchi, A. Raffo, G. Bosi, G. Vannini, G. Avolio, K. Yavuz Kapusz, S. Lemey, H. Rogier, D. Schreurs, “An ultra-wideband setup to monitor antenna-impedance variations in low-cost IoT transmitters,” 2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Brive-la-Gaillarde, France, Jul. 2018, pp. 1–3.
  27. K. Kikuchi, H. Yamamoto, N. Ui, K. Inoue, V. Vadalà, G. Bosi, A. Raffo, G. Vannini, “Comparison of GaN HEMT tecnology processes by large-signal low-frequency measurements,” 2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Brive-la-Gaillarde, France, Jul. 2018, pp. 1–3.
  28. H. Yamamoto, K. Kikuchi, N. Ui, K. Inoue, V. Vadalà, G. Bosi, A. Raffo, G. Vannini, “Analysis of gate-voltage clipping behavior on class-F and inverse class-F amplifiers,” 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, Oct. 2018, pp. 44–47.
  29. V. Vadalà, A. Raffo, K. Kikuchi, H. Yamamoto, G. Bosi, K. Inoue, N. Ui, G. Vannini, “GaN HEMT model with enhanced accuracy under back-off operation,” 14th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, Oct. 2019, pp. 37–40.
  30. G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini, “GaN FET load-pull data in circuit simulators: a comparative study,” 14th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, Oct. 2019, pp. 80–83.
  31. G. Bosi, A. Raffo, V. Vadalà, G. Vannini, G. Avolio, and M. Marchetti, “Load-pull measurements oriented to harmonically-tuned power amplifier design,” International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff, UK, Jul. 2020, pp. 1-3.
  32. G. Bosi, V. Vadalà, R. Giofrè, A. Raffo, and G. Vannini, “Evaluation of microwave transistor degradation using low-frequency time-domain measurements,” 2021 XXXIVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS), Rome, Italy, Aug. 2021, pp. 01-03.
  33. V. Vadalà, A. Raffo, A. Colzani, M. A. Fumagalli, G. Sivverini, G. Bosi, and G. Vannini, “Advanced modelling techniques enabling E-band power amplifier design for 5G backhauling,” 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, Netherlands, Jan. 2021, pp. 161-164.
  34. G. Bosi, A. Raffo, R. Giofrè, V. Vadalà, G. Vannini, and E. Limiti, “Empowering GaN-Si HEMT nonlinear modelling for Doherty power amplifier design,” 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, Netherlands, Jan. 2021, pp. 249-252.
  35. V. Vadalà, A. Raffo, G. Bosi, R. Giofrè, and G. Vannini, “Advanced measurement techniques for nonlinear modelling of GaN HEMTs: from L-band to mm-wave applications,” 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS), Nis, Serbia, Oct. 2021, pp. 63-69.
  36. V. Vadalà, G. Crupi, R. Giofrè, G. Bosi, A. Raffo, and G. Vannini, “mm-wave GaN HEMT technology: advances, experiments, and analysis,” Microwave Mediterranean Symposium (MMS), Pizzo Calabro, Italy, May 2022, pp. 1-6.
  37. V. Vadalà, A. Raffo, G. Bosi, A. Barsegyan, J.Custer, G. Formicone, J. Walker, and G. Vannini, “200W GaN PA design based on accurate multicell transistor modeling”, 2022 IEEE MTT-S International Microwave Symposium Digest, Denver, CO, USA, Jun. 2022, pp. 1–4.