Curriculum
Giorgio Vannini received the Laurea degree in Electronic Engineering from the University of Bologna in 1987. Since then he was a research fellow at the Department of Electronics of the University of Bologna. In particular, he developed design techniques for microwave integrated circuits in cooperation with Telettra (Milan) and Elettronica SpA (Rome). In the same period he worked to the growth of the laboratory of characterization, testing and CAD of Monolithic Microwave Integrated Circuits (MMIC).
In 1992 he joined as a Research Associate the Department of Electronics, Computer Sciences and Systems of the University of Bologna. In the same year he received the Ph.D. in Electronic and Computer Science Engineering, with a thesis on CAD techniques for microwave integrated circuits.
Since 1994 to 1998 he was also with IEIIT-CNR, Bologna, "Institute of Electronics, Computer Science and Telecommunication Engineering", National Research Council (CNR), where he was responsible of the MMIC testing and CAD laboratory.
He has been an Associate Professor of Electronics since 1998 and Full Professor since 2005 at the Faculty of Engineering (now Department of Engineering), University of Ferrara.
From 2007 to 2015 he was Head of the Engineering Department of the University of Ferrara, from 2010 to 2012 Member of the Board of Directors and from 2012 to 2015 Member of the Academic Senate.
From 2012 to 2018 he was a member of the Technical and Scientific Committe of the MISTER Laboratory (Laboratory on Micro and Sub-micro Technologies).
During his academic career he has been a teacher in courses of Analog Electronics, Industrial Electronics, Telecommunication Circuits, Electronics for Telecommunications as well as advanced courses on microwave circuit design.
He is a member of the council for the PhD course in Engineering Sciences (area of Information Engineering), University of Ferrara, and has been a supervisor for several PhD students.
His research activity, mainly devoted to electron device modeling, CAD techniques for Monolithic Microwave Integrated Circuits (MMIC) and nonlinear circuit analysis and design, has led to 300 papers published in international journals and conferences. In 1995, 1998 and 2001 he was awarded for the best papers presented at the 25th European Microwave Conference, GAAS98 and GAAS2001, respectively.
Giorgio Vannini has been the responsible of research contracts with national and international industries (Alenia, Telettra, Elettronica, Ericsson, ST Microelectronics, Dassult Electronique, UMS, Huawei, Leonardo, Sumitomo, SIAE-Microelettronica, Integra Technologies, etc.), and research projects supported by ASI, CNR, MIUR, ESA, UE (ESPRIT, HCM, NoE TARGET, Eurostars).
Giorgio Vannini is a member of IEEE, GAAS association and is a co-founder of the academic spin-off MEC srl. He serves as a reviewer for many international journals and in particular Trans. on Microwave Theory and Techniques, Trans. on Electron Devices, Trans. on Circuits and Systems, Electron Device Letters, Intern. Journ. on RF and Microwave CAE.
Summary of the Research Work
The Research activity dates back to the end of eighties. Different topics related to the Computer Aided Design of RF and microwave integrated circuits have been dealt with: non-linear electron device modelling and characterisation, numerical techniques for non-linear circuit analysis, design methodologies for non-linear circuits (mixers, oscillators and power amplifiers).
1987 - Pioneering research was carried out on non-linear black-box modelling approaches for microwave electron devices, initially dealing with “Describing Functions”-like models, and successively studying the modelling of non-linear dynamic systems (Volterra’s series) [1].
1990 -The “Non-linear Integral Model” (NIM) [2,3] has been proposed. This was probably the first electron device model to directly exploit suitable device measurements to compute the device non-linear dynamic response. Different new concepts were introduced with the NIM: the behavioral approach to the non-linear transistor modelling, the introduction of a “measurement-based” model, and the definition of a “Non-linear Integral Series” [4] of which the famous Volterra series is a particular case. Interestingly, the paper on the NIM was re-discovered fifteen years later by several authors dealing with behavioral models.
1991 - Development of a new numerical technique for the efficient intermodulation analysis of non-linear microwave circuits [5,6,7] which demonstrated an enormous improvement in terms of simulation time and memory occupation, making it feasible circuit analyses otherwise impossible on workstations available at that time. The basic idea was later exploited to develop numerical techniques for the analysis of non-linear circuits under digitally modulated excitations (e.g., Envelope Circuit Simulation introduced in 1995 by HP, now Agilent Technologies).
1993 - At the end of eighties, troubles caused by “traps” and thermal effects in III-V transistors become evident. A new non-linear modelling approach was developed [8], [9] which comprehensively dealt with traps and thermal effects by clearly introducing concepts still adopted nowadays for the modelling of I/V dynamic.
characteristics in III-V FETs. Research in this field has been going on with a number of papers published [e.g. [10]), also on GaN technologies [11].
1999 - MMIC millimeter-wave applications show the limitations of lumped-element transistor models (poor description of coupling, parasitic and distributed effects). In such a context, an empirical distributed modelling approach based on EM (Method of Moments) simulations of the electron device layout was introduced [12]. Later, the same approach has been successfully adopted to model Cascode FETs [13] and for GaN noise models [14].
2005 – A new low-frequency dynamic I/V measurement system is developed [10] that will put the basis for the research activity in the following years. This system is a valuable alternative to the use of pulsed I/V measurements for the characterization of dispersive effects (in GaN transistors in particular) [15]. It has been successively exploited for transistor modeling [10,11,16], reliability testing [17] and of for the design of power amplifiers [18,19].
2008 – Research on transistor modeling is going on: different issues related to equivalent circuit models [20,21,22] and thermal dependence [23,24] are dealt with.
2009 – The low-frequency dynamic I/V characterization system evolves toward a fully-automated load-pull system [15] and an associated design technique for power amplifiers is proposed [18]. Moreover, “nonlinear embedding/de-embedding” techniques [25,26] are investigated as well as their application [19,27,28].
2011 – Advanced nonlinear and dynamic-bias measurement techniques are applied in the context of electron device modeling [29,30,31,32].
2017 to present - Technology transfer of the developed measurement systems is being carried out (research contracts with Leonardo, Sumitomo and Integra Technologies). The research activity is oriented to the modeling of very high power [33] and millimeter-wave transistors [34].
Research activity was also devoted to HMIC and MMIC design in cooperation with several industrial, research and academic partners: X-band MMIC Doppler sensor, highly-linear cold-FET mixers, 20 GHz GaAs HFET and 35 GHz GaAs PHEMT power amplifiers, X-band HBT and PHEMT power amplifiers, L- and X-band GaN high-power amplifiers, wideband PHEMT LNAs, DROs and push-push VCOs, etc.
Research work has been carried out in the context of national and international research projects, and also led to the foundation of the academic spin-off MEC srl in 2004.
In 1995, 1998 and 2001, papers presented at the 25th European Microwave Conference, GAAS98 and GAAS2001, respectively, received the "Best Paper Award".
MAIN REFERENCES
[01] F.Filicori, V.A.Monaco, G.Vannini, “Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends”, European Transactions on Telecommunications and related technologies, Vol.1, n.6, pp.641-653, December 1990, invited.
[02] F.Filicori, G.Vannini, “Mathematical approach to large-signal modelling of electron devices”, Electronics Letters, Vol.27, n.4, pp.357-358, February 1991.
[03] F.Filicori, G.Vannini, V.A.Monaco, “A nonlinear integral model of electron devices for HB circuit analysis”, IEEE Trans. on Microwave Theory and Techniques, special issue on “Process oriented CAD and modelling”, Vol.40, n.7, pp.1456-1465, July 1992.
[04] D.Mirri, G.Iuculano, F.Filicori, G.Pasini, G.Vannini, G.Pellegrini, “A modified Volterra series approach for nonlinear dynamic system modelling”, IEEE Trans. on Circuits and Systems I, Vol.49, n.8, pp.1118-1128, August 2002.
[05] F.Filicori, V.A.Monaco, G.Vannini, “Computationally efficient multitone analysis of non-linear microwave circuits”, Proc. of the 21st European Microwave Conference, Stuttgart, Germany, pp.1550-1555, September 9- 12, 1991.
[06] G. Vannini, F. Filicori, P.A. Traverso, “Tool for efficient intermodulation analysis using conventional HB packages", Electronics Letters, Vol.35, No. 17, pp. 1415-1416, August 1999.
[07] A. Costantini, P.A. Traverso, G. Vannini, “Power amplifier ACPR simulation using standard Harmonic balance tools”, IEEE ISCAS, International Symposium on Circuits and Systems, Scottsdale, Arizona, USA, May 26-29, 2002.
[08] F.Filicori, G.Vannini, A.Mediavilla, A.Tazon, “Modelling of deviations between static and dynamic drain characteristics in GaAs FETs”, Proc. of 23rd European Microwave Conference, Madrid, Spain, pp.454-457, September 6-9, 1993.
[09] F.Filicori, G.Vannini, A.Santarelli, A.Mediavilla, A.Tazon, Y.Newport, “Empirical modelling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs”, IEEE Trans. on Microwave Theory and Techniques, Vol.43, n.12, pp.2973-2981, December 1995.
[10] A.Raffo, A.Santarelli, P.A.Traverso, G.Vannini, F.Palomba, F.Scappaviva, M.Pagani, F.Filicori, “Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects”, IEEE Trans. on Microwave Theory and Techniques, Vol.53, no.11, pp., Nov 2005.
[11] A.Raffo, V.Vadalà, D.Schreurs, G.Crupi, G.Avolio, A.Caddemi, G.Vannini, "Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design", IEEE Trans. On Microwave Theory and Techniques, April 2010.
[12] A.Cidronali, G.Collodi, G.Vannini, A.Santarelli, G.Manes, “A new approach to FET model scaling and MMIC design based on electromagnetic analysis”, IEEE Trans. on Microwave Theory and Techniques, Vol.47, no.6, pp. 900-907, June 1999.
[13] D.Resca, J.A.Lonac, R.Cignani, A.Raffo, A.Santarelli, G.Vannini, F.Filicori, “Accurate EM-based Modelling of Cascode FETs”, IEEE Trans. On Microwave Theory and Techniques, April 2010.
[14] A.Nalli, A.Raffo, G.Crupi, S.D’Angelo, D.Resca, F.Scappaviva, G.Salvo, A.Caddemi, G.Vannini, “GaN HEMT Noise Model Based on Electro-Magnetic Simulations”, IEEE Trans. On Microwave Theory and Techniques, Aug 2015.
[15] A.Raffo, S.Di Falco, V.Vadalà, G.Vannini, “Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System”, IEEE Trans. On Microwave Theory and Techniques, Sept 2010.
[16] A.Raffo, G.Bosi, V.Vadalà, G.Vannini, “Behavioral Modeling of GaN FETs: a Load-Line Approach”, IEEE Trans. On Microwave Theory and Techniques, Jan 2014.
[17] A.Raffo, V.Di Giacomo, P.A. Traverso, A.Santarelli, G.Vannini, "An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime", IEEE Trans. on Instrumentation and Measurements, Aug 2009.
[18] A.Raffo, F.Scappaviva, G.Vannini, “A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line”, IEEE Trans. On Microwave Theory and Techniques, July 2009.
[19] D.Resca, A.Raffo, S.Di Falco, F.Scappaviva, V.Vadalà, G.Vannini, “X-Band GaN Power Amplifier for Future Generation SAR Systems”, IEEE Microwave and Wireless Components Letters, April 2014.
[20] G. Crupi, D. Schreurs, A. Raffo, A. Caddemi, G. Vannini, “A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay”, IEEE Trans. on Microwave Theory and Techniques, April 2008.
[21] G.Crupi, D.Schreurs, A.Caddemi, A.Raffo, F.Vanaverbeke, G.Avolio, G.Vannini, W.De Raedt, “High- Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology”, IEEE Microwave and Wireless Components Letters, Jul 2011.
[22] G.Crupi, A.Raffo, A.Caddemi, G.Vannini, “Kink Effect in S22 for GaN and GaAs HEMTs”, IEEE Microwave and Wireless Components Letters, May 2015.
[23] Z.Marinkovića, G.Crupi, A.Caddemi, G.Avolio, A.Raffo, V.Marković, G.Vannini, D.Schreurs, “Neural Approach for Temperature Dependent Modeling of GaN HEMTs”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, July 2015.
[24] G. Crupi, A. Raffo, G. Avolio, D. Schreurs, G. Vannini, A. Caddemi, “Temperature Influence on GaN HEMT Equivalent Circuit”, IEEE Microwave and Wireless Components Letters, 2016.
[25] V.Vadalà, G.Avolio, A.Raffo, D.Schreurs, G.Vannini, “Nonlinear Embedding and De-embedding Techniques for Large-signal FET Measurements”, Microwave and Optical Technology Letters, Dec 2012.
[26] A. Raffo, V. Vadalà, and G. Vannini, “Nonlinear Embedding and De-embedding: Theory and Applications”, in “Microwave De-embedding: From Theory to Applications”, ISBN 978-0124017009, Academic Press, Oxford, 2013.
[27] V.Vadalà, A.Raffo, S.Di Falco, G.Bosi, A.Nalli, G.Vannini, “A Load-Pull Characterization Technique Accounting for Harmonic Tuning”, IEEE Trans. On Microwave Theory and Techniques, July 2013.
[28] A. Raffo, V. Vadalà, G. Bosi, F. Trevisan, G. Avolio, G. Vannini, “Waveform Engineering: State-of-the-Art and Future Trends”, INVITED PAPER, International Journal of RF and Microwave CAE, 2016.
[29] G.Avolio, D.Schreurs, A.Raffo, G.Crupi, I.Angelov, G.Vannini, B.Nauwelaers, “Identification technique of FET model based on vector nonlinear measurements”, Electronics Letters, Vol.47, n.24, p.1323–1324, Nov 2011.
[30] G.Avolio, A.Raffo, I.Angelov, V.Vadalà, G.Crupi, A.Caddemi, G.Vannini, D.Schreurs, “Millimetre-wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique”, IEEE Trans. On Microwave Theory and Techniques, Nov 2014.
[31] G. Avolio, A. Raffo, V. Vadalà, G. Vannini, D. Schreurs, “Dynamic-Bias S-parameters: A New Measurement Technique for Microwave Transistors”, IEEE Trans. On Microwave Theory and Techniques, 2016.
[32] V. Vadalà, A. Raffo, G. Avolio, M. Marchetti, D. Schreurs, G. Vannini, "A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification", IEEE Trans. On Microwave Theory and Techniques, 2017.
[33] A. Raffo, V. Vadalà, H. Yamamoto, K. Kikuchi, G. Bosi, N. Ui, K. Inoue, G. Vannini, “A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations”, IEEE Trans. On Microwave Theory and Techniques, 2020.
[34] V. Vadalà, A. Raffo, A. Colzani, M. Fumagalli, G. Sivverini, G. Bosi, G. Vannini, “Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling”, EuMIC2020, European Microwave Week, Jaarbeurs Utrecht, The Netherlands, Virtual Jan 2021.
RESEARCH PROJECTS
2020-21 Non-linear electro-thermal model for a 26.4mm GaN power-bar Research contract with Integra Technologies.
2020-23 VISTAM - V band Inter Satellite link solid sTate power Amplifier Module ESA - Research Contract - In cooperation with SIAE-Microelettronica
2020-24 GaN Transistor Characterization and Modelling using advanced measurement techniques Research Agreement - Sumitomo Electric Industries, Japan
2019-22 Empowering GaN-on-SiC and GaN-on-Si technologies for the next challenging millimeter-wave applications (GANAPP) PRIN 2017 - Research Project in cooperation with other Italian Universities - MIUR
2019-21 Highly-Integrated GaN MMICs for High-Power and High-Frequency Operation (Hi3GaN) ASI - Research contract, in cooperation with MEC s.r.l., Bando competitivo ASI "Nuove Idee per la Componentistica Spaziale del Futuro" 30.11.2016
2017-20 GaN Transistor Characterization and Modelling under Low-Frequency Large-Signal Operation Research Agreement - Sumitomo Electric Industries, Japan
2018-19 GaN Transistor Characterization by means of Low-Frequency Large-Signal Measurement Setups Research Agreement - Sumitomo Electric Industries, Japan
2016-18 MicromodGaN - High power RF Micro-modules Itar-free, smart and highly-integrated for SSPA market H2020-Eureka Eurostars2 Research Project - in cooperation with MEC srl Italy and TTI Norte Spain
2017-18 Large-Signal Harmonic Characterization and Modeling of GaN FETs Research contract with Leonardo SpA, Rome, Italy
2017 GaN Transistor Characterization and Modelling under Low-Frequency Large-Signal Operation Research Grant - Sumitomo Electric Industries, Japan
2017 Support to the design and industrialization of devices for ultrasound and diathermy therapy
Research contract with Emildue s.r.l., Cento, Italy
2016-17 Support to the design and industrialization of a device for ultrasound therapy Research contract with PBG s.r.l., Bologna, Italy
2016-17 Development of power-amplifier mini-modules for next-generation SSPAs Research contract with MEC s.r.l., Bologna, Italy
2014-15 Development of MMIC chipsets for satellite applications Research contract with MEC s.r.l., Bologna, Italy
2014 Design of 27MHz high-power amplifiers Research contract with PBG s.r.l., Italy
2013 Design of GaN MMIC circuits for T/R modules receivers Research contract with MEC s.r.l., Bologna, Italy
2013 Design and Testing of a Power Amplifier for Medical Diathermy Research contract with Emildue, Cento, Italy
2012 Characterisation and Modeling of Microwave Transistors for HMIC and MMIC Design Research contract with MEC s.r.l., Bologna, Italy
2012 Design and Testing of a Power Amplifier for Ultrasound Treatment Research contract with Emildue, Cento, Italy
2011-12 Design Techniques for LDMOS FM Power Amplifiers Research contract with ELENOS, Poggio Renatico, Italy
2011 Characterisation of Package and Capacitances of power MOSFETs Research contract with ELENOS, Poggio Renatico, Italy
2011 Device characterisation, Modeling and Design Techniques for wireless MMICs Research Contract with MEC s.r.l., Bologna, Italy
2011-13 Design Techniques for E-band MMICs PhD Scholarship - Huawei Technologies
2010-12 GaN Power Amplfiers for space applications: design, development and testing (PAGaN) ASI - Research contract, in cooperation with MEC s.r.l., Bologna, and Italian Universities
2010 Preliminar design of an I/V measurement system for power MOSFETs Research contract with ELENOS, Poggio Renatico, Italy
2009-11 Design and implementation of an L-band power amplifier for airport and naval radars (RIGENERA) Research Contract with MEC s.r.l., Bologna, Italy
2009 Development of device models and design techniques for space and telecommunication microwave circuits Research Contract with MEC s.r.l., Bologna, Italy
2008-10 Design and implementation of an MMIC X-band Chip Set for second generation T/R modules (PROMIX) ASI - Research contract, in cooperation with MEC s.r.l., Bologna, and Italian Universities
2008 Development of device models and design techniques for space and telecommunication microwave circuits Research Contract with MEC s.r.l., Bologna, Italy
2007-08 On the design of a supervision control system for electrical cars Research Contract with Enerblu, Modena, Italy
2007-08 Non-linear models and design approaches for low-noise high dynamic range integrated radio systems MIUR - Research project, in cooperation with other Italian Universities
2006-07 Preliminary design of low-phase-noise integrated VCOs for 2nd generation T-R systems for SAR Payloads
ASI - Research contract, in cooperation with Alcatel Alenia Spazio and Italian Universities
2004-08 TARGET - Top Amplifier Research Group in a European Team Network of Excellence, VI EU Framework Program, in cooperation with other European Universities and Research Centers
2004-05 Non-linear noise models and design of low-phase noise oscillators for high performance communication systems
MIUR - Research project, in cooperation with other Italian Universities
2004 Preliminary design of high-efficiency power amplifiers for 2nd generation X-band T-R modules for SAR Payloads
ASI - Research contract, in cooperation with Alenia Spazio and Italian Universities
2001-03 Characterization, modeling and Reliability of microwave power semiconductor devices for satellite applications
ASI - Research contract, in cooperation with other Italian Universities 2001-02 Electron device modelling for IMD prediction Ericsson - Research contract
2000-02 Structures and design methodologies for microelectronic systems of the next generations MURST - Progetto di ricerca legge 488/92, in cooperation with ST Microelectronics
2000-03 Micro- and Millimeter-wave modules based on multi function MMICs MURST - Progetto di Ricerca Applicata (FRA), in cooperation with SIAE-Microelettronica
The Research Projects listed below were carried out under University of Bologna or CNR affiliations
2000-02 FET Heterostructure Devices with 150nm gate length
CNR - Progetto di Ricerca Applicata Nanotecnologie, in cooperation with Alenia and other Italian Universities and Research Centers
1998-01 Design of 20 and 35GHz power amplifiers
CNR - Progetto di Ricerca Applicata Microelettronica, in cooperation with Alenia and other Italian Universities and Research Centers
1999-00 Characterisation and reliability of InP HEMTs for space applications ASI Contract, in cooperation with other Italian Universities
1998-00 Reliability and failure physics of compound semiconductor electron devices
CNR - Progetto MADESS II, in cooperation with Alenia and other Italian Universities and Research Centers
1998-00 Microwave power devices with high linearity and efficiency
CNR - Progetto MADESS II, in cooperation with Alenia and other Italian Universities and Research Centers 1998-00 Piezoelectric actuators for injection systems
CNR - Progetto MSTA II, in cooperation with Centro Ricerche FIAT and other Italian Universities and Research Centers
1997-99 Development of low-distortion mixers
ESA/ESTEC Contract, in cooperation with Dassault Electronique
1996-98 Stress prediction versus system operating conditions in microwave GaAs MESFETs ESA/ESTEC Contract, in cooperation with University of Padova
1997 Active device models and CAD methodologies for microwave front-end for phased-array antennas
CNR - Progetto coordinato: Microwave front-end for phased-array antennas, in cooperation with other Italian Universities and Research Centers
1996-97 Nonlinear models of active devices for micro- and millimeter-waves Azione Integrata Italia/Spagna, in cooperation with University of Cantabria, Spain 1996-97 Modelling of dispersive effects in III-V transistors
Progetto CNR per la Cooperazione Scientifica e Tecnologica con i Paesi del Mediterraneo, in cooperation with University of Cantabria, Spain; TECHNION, Institute of Technology, Israel
1995-97 Device modelling and circuit design
CNR - Progetto strategico: Wide-band Wireless Local Area Networks, in cooperation with other Italian Universities and Research Centers
1996 Electron device models for hyperfrequencies
MURST 40% - Microelectronics for hyperfrequencies, in cooperation with other Italian Universities
1996 Modeling and experimental characterisation of microwave and millimiter-wave active devices
CNR - Progetto coordinato: Characterisation, simulation and modelling of compound semiconductor devices and correlations with processes and materials, in cooperation with other Italian Universities and Research Centers
1996 Algorithms and CAD methodologies for the design of active circuits for high-frequency electronic automotive systems
CNR - Progetto coordinato: Hyperfrequency systems for automotive, in cooperation with other Italian Universities and Research Centers
1995-96 Modeling of low-frequency dispersive effects in III-V FETs ESA/ESTEC Contract
1994-96 Characterisation and modeling of high-speed BJTs SGS-Thomson/CORIMME Contracts
1994-96 Microwave Doppler Sensor
ESPRIT-MEPI, in cooperation with University of Ferrara and LFGM, Bologna
1994-95 Multifunction MMIC for Microwave Wireless Local Area Network
ESPRIT-ISMILE in cooperation with University of Florence, Parma and Logitron, Florence
1994-95 Algorithms and CAD methodologies for the design of active circuits for personal telecommunications CNR project
1993-95 Microwave technology for telecommunications
HCM - Human Capital and Mobility, in cooperation with other European Universities
1993-95 Active device models and design of microwave integrated circuits
MURST 40%, in cooperation with other Italian Universities
1993-94 Nonlinear models of electron devices for microwave integrated circuits
CNR - Progetto strategico: Solid state electronics, in cooperation with other Italian Universities and Research Centers
1993-94 Modelling of dispersion phenomena in microwave transistors
CNR - Progetto bilaterale, in cooperation with University of Cantabria, Spain
1992-94 HB analysis and design of nonlinear microwave circuits under multitone excitations CNR project
1992-93 Nonlinear Integral Modelling of microwave electron devices ESA/ESTEC Contract
1991-93 CAD and modelling techniques for millimetric devices and integrated circuits
CNR - Progetto speciale: Analysis and design of millimeter-wave devices and circuits, in cooperation with other Italian Universities and Research Centers
1989-92 Algorithms and computer methods applied to numerical simulation of semiconductor devices CNR - Progetto speciale, in cooperation with other Italian Universities and Research Centers
1989-91 Design methodologies for stabilised oscillators
Azione Integrata Italia/Spagna, in cooperation with University of Cantabria, Spain
1987-90 Nonlinear Microwave Circuits
CNR - Progetto finalizzato MADESS - Materials and devices for solid state electronics, Theme: Monolithic Integrated Circuits, in cooperation with other Italian Universities, Research Centers and Telettra s.p.a.
