Active Balun Design for Next-Generation Telecom Satellite Frequency Converters

Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Scalability of Multifinger HEMT Performance

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

An ultra-wideband sensing board for radio frequency front-end in IoT transmitters

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology

Current-gain in FETs beyond cut-off frequency

Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs

Nonlinear-embedding design methodology oriented to LDMOS power amplifiers

Waveform engineering: State-of-the-art and future trends (invited paper)

A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification

A procedure for the extraction of a nonlinear microwave GaN FET model

Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Temperature Influence on GaN HEMT Equivalent Circuit

Empowering GaN HEMT models: The gateway for power amplifier design