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A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation
Bosi, G.; Raffo, A.; Vadala, V.; Giofre, R.; Crupi, G.; Vannini, G.     dettagli >>
ELECTRONICS
Vol. 12, No. 13, pp: 2939-2956, Anno: 2023

A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function
Gugliandolo, G; Crupi, G; Vadala, V; Raffo, A; Donato, N; Vannini, G     dettagli >>
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
Vol. 33, No. 7, pp: 1007-1010, Anno: 2023

Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
Resca, D.; Bosi, G.; Biondi, A.; Cariani, L.; Vadala, V.; Scappaviva, F.; Raffo, A.; Vannini, G.     dettagli >>
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 33, No. 2, pp: 165-168, Anno: 2023

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection
Scappaviva, F.; Bosi, G.; Biondi, A.; D'Angelo, S.; Cariani, L.; Vadala, V.; Raffo, A.; Resca, D.; Cipriani, E.; Vannini, G.     dettagli >>
ELECTRONICS
Vol. 11, No. 19, pp: 2998-3007, Anno: 2022

Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers
Yamamoto, H.; Kikuchi, K.; Vadala, V.; Bosi, G.; Raffo, A.; Vannini, G.     dettagli >>
IEICE TRANSACTIONS ON ELECTRONICS
Vol. E105C, No. 10, pp: 449-456, Anno: 2022

Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches
Jarndal, A.; Crupi, G.; Alim, M. A.; Vadala, V.; Raffo, A.; Vannini, G.     dettagli >>
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Vol. 35, No. 5, pp: e3008-1-e3008-11, Anno: 2022

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
Jarndal, A.; Crupi, G.; Raffo, A.; Vadala', V.; Vannini, G.     dettagli >>
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Vol. 9, No. 1, pp: 378-386, Anno: 2021

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations
Raffo, A.; Vadala, V.; Yamamoto, H.; Kikuchi, K.; Bosi, G.; Ui, N.; Inoue, K.; Vannini, G.     dettagli >>
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Vol. 68, No. 7, pp: 3100-3110, Anno: 2020

Scalability of Multifinger HEMT Performance
Crupi, G.; Raffo, A.; Vadala, Valeria; Vannini, G.; Schreurs, D. M. M. -P.; Caddemi, A.     dettagli >>
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 30, No. 9, pp: 869-872, Anno: 2020

An ultra-wideband sensing board for radio frequency front-end in IoT transmitters
Petrocchi, A.; Raffo, A.; Bosi, G.; Avolio, G.; Resca, D.; Vannini, G.; Schreurs, D.     dettagli >>
ELECTRONICS
Vol. 8, No. 10, pp: 1191-1-1191-16, Anno: 2019

Nonlinear-embedding design methodology oriented to LDMOS power amplifiers
Bosi, Gianni; Raffo, Antonio; Trevisan, Francesco; Vadala, Valeria; Crupi, Giovanni; Vannini, Giorgio     dettagli >>
IEEE TRANSACTIONS ON POWER ELECTRONICS
Vol. 33, No. 10, pp: 8764-8774, Anno: 2018

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>
SOLID-STATE ELECTRONICS
Vol. 152, No. 1, pp: 11-16, Anno: 2018

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>
ELECTRONICS
Vol. 7, No. 12, pp: 353-1-353-11, Anno: 2018

Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs
Crupi, Giovanni; Raffo, Antonio; Vadala, Valeria; Avolio, Gustavo; Schreurs, Dominique M. M. -P.; Vannini, Giorgio; Caddemi, Alina     dettagli >>
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 28, No. 4, pp: 326-328, Anno: 2018

Current-gain in FETs beyond cut-off frequency
Crupi, Giovanni; Raffo, Antonio; Vadalà, Valeria; Vannini, Giorgio; Caddemi, Alina     dettagli >>
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Vol. 60, No. 12, pp: 3023-3026, Anno: 2018

Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems
Raffo, Antonio; Avolio, Gustavo; Vadala', Valeria; Bosi, Gianni; Vannini, Giorgio; Schreurs, Dominique     dettagli >>
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 28, No. 11, pp: 1035-1037, Anno: 2018

A procedure for the extraction of a nonlinear microwave GaN FET model
Avolio, Gustavo; Vadala', Valeria; Angelov, Iltcho; Raffo, Antonio; Marchetti, Mauro; Vannini, Giorgio; Schreurs, Dominique     dettagli >>
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Vol. 30, No. 1, pp: 1-12, Anno: 2017

Waveform engineering: State-of-the-art and future trends (invited paper)
Raffo, Antonio; Vadala', Valeria; Bosi, Gianni; Trevisan, Francesco; Avolio, Gustavo; Vannini, Giorgio     dettagli >>
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Vol. 27, No. 1, pp: 1-16, Anno: 2017

A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification
Vadala', Valeria; Raffo, Antonio; Avolio, Gustavo; Marchetti, Mauro; Schreurs, Dominique M. M. P.; Vannini, Giorgio     dettagli >>
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Vol. 65, No. 1, pp: 218-228, Anno: 2017

Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors
Avolio, Gustavo; Raffo, Antonio; Vadala', Valeria; Vannini, Giorgio; Schreurs, Dominique M. M. P.     dettagli >>
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Vol. 64, No. 11, pp: 3946-3955, Anno: 2016

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